BSZ130N03LSGATMA1 vs BSC019N04NSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ130N03LSGATMA1 sa pamamagitan ng Infineon at BSC019N04NSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSZ130N03LSGATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 25V / 30V | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Ta=25 C) | 10 A | — |
| Patuloy na Drain Current (TC=25°C) | 35 A | — |
| On-State Resistance Rds(on) max @ Vgs=10V | 13 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | 2.2 V | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 25 W | — |
| Packhaging | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) | PG-TDSON-8-1 (TDSON-8 FL) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | -55C to +150C |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Qualification | Industrial / Commercial (non-automotive) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TA=25C | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | — | 2.5 mΩ |
| RDS(on) typ at VGS=10V | — | 1.9 mΩ |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Power Dissipation (PD) at TC=25C | — | 125 W |