BSZ150N10LS3GATMA1 vs BSZ130N03LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSZ150N10LS3GATMA1 dari Infineon dan BSZ130N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSZ150N10LS3GATMA1 BSZ130N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ150N10LS3GATMA1 —
Technology / Family OptiMOS 3 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc=25 °C) 40 A —
On-Resistance RDS(on) max 15 mΩ —
Power Dissipation (TA=25 °C) 2.1 W —
Dissipasi Listrik (TC=25°C) 63 W —
Paket PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Operating Temperature Range (TJ) -55 °C to +150 °C —
Gate Threshold VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Status RoHS Compliant Compliant
Lead-Free / Reflow Yes (lead-free, 260 °C peak reflow compatible) —
Level MSL [DATA_NEEDED: MSL moisture sensitivity level] 1 (per JEDEC J-STD-020)
Part Family — OptiMOS 25V / 30V
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Ta=25 C) — 10 A
Arus Alir Berlanjut (TC=25°C) — 35 A
On-State Resistance Rds(on) max @ Vgs=10V — 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA — 2.2 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 25 W
Rentang Suhu Kerja — -55 C to +150 C (junction)
Lead-Free — Yes
Bebas Halogen — Yes
Qualification — Industrial / Commercial (non-automotive)

Spek dan Sumber

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