EP1M120F48416 vs EP1M120F484C8ES Perbandingan

Perbandingan bersamaan detil EP1M120F48416 dari Intel dan EP1M120F484C8ES dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP1M120F48416 EP1M120F484C8ES
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Obsolete Obsolete
Family Altera Mercury PLD ACEX 1M
Logic Elements 120000 (approximately) —
Embedded System Blocks (ESBs) 4800 —
Total RAM Bits 49152 —
Maximum User I/O Pins 303 —
Paket 484-ball FCBGA (FineLine BGA) 484-ball FineLine BGA
Speed Grade -6 C8 (-8 speed bin)
Temperature Grade Industrial —
Process Technology SRAM-based LUT, 0.18 um CMOS 0.18 µm CMOS, SRAM-based
Core Voltage [DATA_NEEDED: core voltage] —
I/O Standards LVTTL, LVCMOS, LVDS, SSTL, HSTL LVTTL, LVCMOS, True-LVDS, PCI
Clock Management On-chip PLLs —
High-Speed Serial Channels [DATA_NEEDED: high-speed serial channel count for EP1M120] —
Configuration SRAM-based, in-system reconfigurable —
Tipe Mounting Surface Mount (BGA) Surface Mount (BGA)
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED]
Manufacturer — Intel (formerly Altera)
Logic Elements / Gates — 120,000 (120K gates)
Embedded Logic Cells (EABs) — 4,800
User I/O Pins — 303
Sample Grade — ES (Engineering Sample)
Embedded RAM — ~104 Kbits across 12 RAM blocks
PLLs — 4 enhanced PLLs
Operating Voltage (Core) — [DATA_NEEDED: core VCC range]
MultiVolt I/O Support — 1.5 V / 2.5 V / 3.3 V / 5.0 V tolerant
Configuration Method — SRAM bitstream, JTAG/serial
Suhu Kerja — [DATA_NEEDED: industrial/commercial grade temp range]

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