EP1M120F484C6N vs EP1M120F484C6ES Perbandingan
Perbandingan bersamaan detil EP1M120F484C6N dari Intel dan EP1M120F484C6ES dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP1M120F484C6N | EP1M120F484C6ES |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Obsolete | Obsolete |
| Family | Mercury (APEX PLD platform) | Mercury (Altera / Intel) |
| Typical Gates | 120,000 | — |
| Logic Cells / Elements | 4,800 | — |
| Logic Array Blocks (LABs) | 480 | 480 |
| User I/Os | 303 | — |
| Paket | 484-ball FC-FBGA (FineLine BGA) | 484-ball FC-FBGA |
| Core Supply Voltage (VCCINT) | 1.71 V to 1.89 V (1.8 V nominal) | — |
| Transceiver Data Rate | Up to 1.25 Gbps with CDR | — |
| Suhu Kerja | 0C to 85C (commercial) | [DATA_NEEDED: commercial / industrial / military grade] |
| Process Technology | CMOS | — |
| Architecture | LUT-based, optimized for high-speed interconnect | — |
| MultiCore Support | Yes (hot socketing) | — |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Level MSL | 3 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | [DATA_NEEDED: per specific lot] |
| System Gates | — | 120,000 |
| Logic Elements / Cells | — | 4,800 |
| Embedded Memory (bits) | — | 49,152 |
| Maximum User I/O | — | 303 |
| Core Supply Voltage | — | 1.8 V |
| I/O Standards Supported | — | LVTTL, LVCMOS (1.5/1.8/2.5/3.3 V) |
| Configuration Technology | — | SRAM (volatile) |
| Speed Grade | — | 6 (-6) |
| JTAG / Boundary Scan | — | Yes (IEEE 1149.1) |
| Part Status | — | Obsolete / last-time-buy (ES suffix = engineering sample) |