EP3C40F780C7N vs EP3C55F780C7N Perbandingan
Perbandingan bersamaan detil EP3C40F780C7N dari Intel dan EP3C55F780C7N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP3C40F780C7N | EP3C55F780C7N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Family | Cyclone III | Cyclone III |
| Logic Elements | 39,600 LE | 55,856 |
| Total RAM Bits | 1,161,216 bits | — |
| Embedded Multipliers | 126 (18x18) | 156 (18 x 18) |
| User I/Os | 535 | — |
| Paket | 780-ball FBGA (FineLine BGA) | 780-ball FineLine BGA |
| Speed Grade | 7 (C7, commercial) | 7 |
| Process Node | 65 nm TSMC low-power | — |
| Suhu Kerja | 0C to +85C (commercial) | 0C to +85C (commercial, C7 speed grade) |
| Supply Voltage (Core) | 1.2 V | — |
| Configuration Method | JTAG, Active Serial, Passive Serial | — |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | 20 |
| Lead-Free / RoHS | Yes (N suffix) | — |
| Moisture Sensitivity Level | MSL3 (per J-STD-020) | — |
| Embedded Memory | — | 2,396,160 bits (approximately 2.4 Mbit) |
| Embedded Memory Blocks | — | 312 M9K blocks |
| User I/O Count | — | 377 |
| Configuration Memory | — | 8 Kbits (supports PS, FPP, JTAG) |
| Process Technology | — | 65 nm low-power CMOS |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) |
| Status RoHS | — | Compliant |