EP3C40F780C7N vs EP3C55F780C7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C40F780C7N sa pamamagitan ng Intel at EP3C55F780C7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C40F780C7N | EP3C55F780C7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone III | Cyclone III |
| Logic Elements | 39,600 LE | 55,856 |
| Total RAM Bits | 1,161,216 bits | — |
| Embedded Multipliers | 126 (18x18) | 156 (18 x 18) |
| User I/Os | 535 | — |
| Packhaging | 780-ball FBGA (FineLine BGA) | 780-ball FineLine BGA |
| Speed Grade | 7 (C7, commercial) | 7 |
| Process Node | 65 nm TSMC low-power | — |
| Temperature na Operasyon | 0C to +85C (commercial) | 0C to +85C (commercial, C7 speed grade) |
| Supply Voltage (Core) | 1.2 V | — |
| Configuration Method | JTAG, Active Serial, Passive Serial | — |
| PLLs | 4 | 4 |
| Global Clock Networks | 20 | 20 |
| Lead-Free / RoHS | Yes (N suffix) | — |
| Moisture Sensitivity Level | MSL3 (per J-STD-020) | — |
| Embedded Memory | — | 2,396,160 bits (approximately 2.4 Mbit) |
| Embedded Memory Blocks | — | 312 M9K blocks |
| User I/O Count | — | 377 |
| Configuration Memory | — | 8 Kbits (supports PS, FPP, JTAG) |
| Process Technology | — | 65 nm low-power CMOS |
| Core Voltage (VCCINT) | — | 1.2 V |
| I/O Bank Voltage (VCCIO) | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V (per bank) |
| Tindminan RoHS | — | Compliant |