EP3SE50F780C4LN vs EP3SL50F780C4LN Perbandingan

Perbandingan bersamaan detil EP3SE50F780C4LN dari Intel dan EP3SL50F780C4LN dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3SE50F780C4LN EP3SL50F780C4LN
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif NRND
Family Stratix III E Stratix III L (Low-Power)
Logic Elements 47,500 —
LABs (Logic Array Blocks) 1,900 —
Embedded Memory 5,760,000 bits —
User I/Os 488 —
Paket 780-ball FC-FBGA 780-BBGA, FCBGA (29x29 mm)
Process Node 65 nm —
Core Voltage 0.9 V —
Speed Grade C4 C4
Suhu Kerja 0°C to 85°C (Commercial) 0C to +85C (Commercial)
Tipe Mounting Surface Mount (BGA) Surface Mount
Lead-Free / RoHS Yes (L suffix) Yes (LN suffix indicates lead-free, enhanced)
Maximum Toggle Frequency 375 MHz —
Configuration Modes Passive Serial, Fast Passive, Active Serial (AS), Active Parallel (AP), JTAG —
DSP Blocks Yes (embedded multipliers) [DATA_NEEDED: 18x18 multiplier count for EP3SL50]
Block RAM Type M9K + M144K —
Memory Architecture SRAM-based, reprogrammable —
Status RoHS Compliant —
Series — Stratix III L
Logic Elements (LE) — 47,500
Logic Array Blocks (LAB) — 1,900
Total RAM Bits — 2,184,192
User I/O Pins — 488
Process Technology — 65 nm
Core Voltage (VCCINT) — 0.86 V to 1.15 V
Level MSL — [DATA_NEEDED: MSL moisture sensitivity level]
Transceivers — [DATA_NEEDED: number of integrated transceivers for F780 package]
Configuration — SRAM-based, configured via Quartus II

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