H5AN4G6NBJR-VKC vs H5AN4G6NBJR-RDC Perbandingan

Perbandingan bersamaan detil H5AN4G6NBJR-VKC dari SK hynix dan H5AN4G6NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum H5AN4G6NBJR-VKC H5AN4G6NBJR-RDC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Ukuran Memori 4 Gbit —
Memory Organization 256M x 16 —
Laju Data 2666 Mbps —
Clock Frequency 1.6 GHz (internal reference per distributor data) —
Supply Voltage (VDD) 1.2 V nominal (1.14 V to 1.26 V) —
Operating Current 38 mA (typical, per distributor data) —
Antarmuka Parallel CMOS, fully synchronous
Technology CMOS —
Suhu Kerja -40C to +95C —
Paket FBGA-96 / TFBGA (PBGA96) —
Body Size 13 mm, 1.2 mm profile, 0.8 mm ball pitch —
Tipe Mounting Surface Mount Surface Mount
Termination Dynamic on-chip termination (ODT) —
Calibration ZQ calibration; write leveling —
Protection Functions Asynchronous reset; CRC; data mask —
Refresh Auto self-refresh —
Status RoHS Compliant —
Packaging Tray —
Density — 4 Gb
Organisasi — 256M x 16
Tegangan Pemuat — 1.2 V
Package Code — TFBGA (FBGA-96)
Package Shape — Rectangular
Package Width — 7.5 mm
Number of Terminals — 96
Temperature Grade — OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet
Self Refresh — Auto / Self Refresh
Data Mask Function — Yes
Asynchronous Reset — Yes
On-Die Termination — Dynamic ODT
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Lead-Free / Halogen-Free — Yes (per datasheet cover: Lead-Free & Halogen-Free)
Speed Grade — -RDC (see manufacturer datasheet for validated data-rate bin)

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