H5AN8G6NCJR-VKC vs H5AN8G6NAFR Perbandingan
Perbandingan bersamaan detil H5AN8G6NCJR-VKC dari SK hynix dan H5AN8G6NAFR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G6NCJR-VKC | H5AN8G6NAFR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Laju Data | 2666 Mbps (MT/s) | 2400 MT/s |
| Clock Frequency | 1.333 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V | — |
| Antarmuka | Parallel | — |
| Suhu Kerja | 0C to +95C | 0°C to +85°C |
| Paket | FBGA-96 | 96-ball FBGA |
| Tipe Mounting | Surface Mount | — |
| Standby Current | 28 mA | — |
| Operating Current | 45 mA | — |
| Fitur | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration | — |
| Lead-Free / Halogen-Free | Yes (per datasheet description) | — |
| Status RoHS | Compliant | — |
| Status Lingkungan Hidup | Active | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Tegangan Pemuat | — | 1.2 V |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Dynamic ODT | — | Yes |
| ZQ Calibration | — | Yes |
| CRC | — | Yes |
| Write Leveling | — | Yes |