H5ANAG8NBJR-PBC vs H5ANAG8NBJR-RDC Perbandingan

Perbandingan bersamaan detil H5ANAG8NBJR-PBC dari SK hynix dan H5ANAG8NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5ANAG8NBJR-PBC H5ANAG8NBJR-RDC
Merek SK hynix SK hynix
Kategori DRAM DRAM
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit (2 GB) 16 Gbit
Organisasi x8 2G x 8
Supply Voltage (VDD) 1.2 V 1.2 V
Speed Grade / Data Rate PBC suffix, DDR4-2666 class —
Paket FBGA-78 (7.5 mm x 11 mm) 78-ball FBGA
Tipe Mounting Surface Mount Surface Mount
Bank Architecture 16 banks in 4 bank groups (DDR4 standard) —
Prefetch 8n —
Tipe Antarmuka Parallel, SSTL12 —
Suhu Kerja [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature Range]
CAS Latency (typical bin) [DATA_NEEDED: CAS latency] —
Refresh Self refresh, 1x/2x/4x refresh modes Self-refresh and auto-refresh (8K/64ms class per family datasheet)
Die Revision BJR —
Status RoHS Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) Compliant (lead-free PBGA per family product data)
Level MSL [DATA_NEEDED: moisture sensitivity level] —
Standard Package Quantity [DATA_NEEDED: standard quantity] —
I/O Voltage (VDDQ) — 1.2 V
Antarmuka — SSTL12
Speed Grade (suffix R) — DDR4-2666 class
Bank Groups — 4 (per 16Gb DDR4 family datasheet)
Data Strobe — DQS with read/write training
Data Bus Inversion — Supported (DBI)
Latensi CAS — [DATA_NEEDED: CAS Latency]
Status Lingkungan Hidup — Active

Spek dan Sumber

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