H5TC4G63AFR-PBA vs H5TC4G63MFR-PBA Perbandingan
Perbandingan bersamaan detil H5TC4G63AFR-PBA dari SK hynix dan H5TC4G63MFR-PBA dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5TC4G63AFR-PBA | H5TC4G63MFR-PBA |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $3,98 | — |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V | 1.35V (+0.100V/-0.067V) |
| Laju Data | 1866 Mbps (PC3L-14900) | 1866 Mbps (PC3L-14900) |
| Paket | 96-ball FBGA | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | 8 |
| Burst Length | 8 and 4 (with burst chop) | BL8, BL4 (with burst chop) |
| CAS Latency (CL) | 11, 12, 13 | Programmable |
| Rentang Suhu Kerja | 0°C to +95°C (Tcase) | — |
| Antarmuka | 16-bit I/O | — |
| On-Die Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | Yes |
| Auto Self-Refresh | Yes | Yes |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |