H5TC4G63AFR-PBJ vs H5TC4G63AFR-H9A Perbandingan
Perbandingan bersamaan detil H5TC4G63AFR-PBJ dari SK hynix dan H5TC4G63AFR-H9A dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5TC4G63AFR-PBJ | H5TC4G63AFR-H9A |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Ukuran Memori | 4 Gb (256M x 16) | — |
| Tegangan Pemuat | 1.35 V | 1.35 V |
| Paket | 96-ball TFBGA | 96-ball FBGA |
| Temperature Grade | Industrial (-40°C to +95°C) | — |
| Refresh Cycles | 8192 | — |
| Package Shape | Rectangular | — |
| Number of Terminals | 96 | — |
| Laju Data | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] | 1866 Mbps (PC3-14900) |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 13 |
| Access Time | 0.225 ns (from H5TC4G63AFR-PBR datasheet) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Status RoHS | [DATA_NEEDED: RoHS Status] | — |
| Density | — | 4 Gb |
| Organisasi | — | 256M x 16 |
| Suhu Kerja | — | 0C to +95C (TC) |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Burst Length | — | 8, 4 |
| On-Die Termination | — | Yes |
| Self-Refresh | — | Yes |
| Auto-Refresh | — | Yes |