IAUC50N08S5N102ATMA1 vs IPC50N04S5L5R5ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC50N08S5N102ATMA1 dari Infineon dan IPC50N04S5L5R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC50N08S5N102ATMA1 IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon

IAUC50N08S5N102ATMA1 - 80V 50A OptiMOS 5 N-MOSFET | Infineon

IAUC50N08S5N102ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC50N08S5N102ATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID) at TC=25°C 50 A —
On-Resistance (RDS(on)) 10.2 mΩ @ 25 A, 10 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate-Source Voltage (VGS) Max ±20 V —
Total Gate Charge (Qg) 21 nC @ 10 V —
Input Capacitance (Ciss) 1394 pF @ 40 V —
Power Dissipation (PD) at TC=25°C 60 W —
Rentang Suhu Kerja -55°C to +175°C -55 °C to +175 °C
Paket / Case PG-TDSON-8-33 —
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 —
Status RoHS Compliant —
Level MSL [DATA_NEEDED: MSL rating] —
Mode — Enhancement Mode
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
Paket — PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

Spek dan Sumber

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