IAUC60N04S6N044ATMA1 vs IAUC100N04S6L014ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC60N04S6N044ATMA1 dari Infineon dan IAUC100N04S6L014ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC60N04S6N044ATMA1 - 40V 4.4mΩ 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6N044ATMA1 ✓ AktifInfineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC60N04S6N044ATMA1 | IAUC100N04S6L014ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS-6 N-channel trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (V_DS) | 40 V | 40 V |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) at Tc=25°C | 60 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: pulsed/current derated value] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max @ V_GS=10V | 4.4 mΩ | — |
| On-Resistance R_DS(on) max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: typical gate charge] | — |
| Power Dissipation (P_D) at Tc=25°C | 42 W | — |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Paket | PG-TDSON-8 (5x6 mm) with exposed pad | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (unlimited) | 1 |
| Automotive Qualification | AEC-Q101 qualified (IAUC prefix) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | IAUC / OptiMOS 6 40V |
| Tipe Transistor | — | N-Channel MOSFET |
| Mode | — | Enhancement |
| Continuous Drain Current (I_D, Tc) | — | 100 A |
| R_DS(on) max (V_GS=10V) | — | 1.4 mOhm |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G typical] |
| Power Dissipation (P_D, Tc) | — | 100 W |
| Rentang Suhu Kerja | — | -55C to +175C |
| AEC-Q101 Qualification | — | Yes |
| Packaging | — | Tape & Reel (ATMA1 suffix) |