IAUCN04S7L006ATMA1 vs IAUCN04S6N009TATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L006ATMA1 dari Infineon dan IAUCN04S6N009TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L006ATMA1 IAUCN04S6N009TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-43 PG-LHDSO-10-2 (SSO10T)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS-7 trench OptiMOS 6 trench MOSFET
Automotive Qualified Yes (AEC-Q101) —
Status RoHS Compliant —
Jumlah Pin 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40 V
Part Number — IAUCN04S6N009T
Ordering Code (MPN) — IAUCN04S6N009TATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, at Tj) — 330 A
Power Dissipation (PD, at Tc) — 178 W
On-Resistance RDS(on) max — 0.9 mΩ
Automotive Qualification — AEC-Q101
Lead-Free / RoHS — Yes / Compliant
Gate Threshold VGS(th) typ — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge Qg typ — [DATA_NEEDED: total gate charge]

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