IAUCN04S7L014ATMA1 vs IAUCN04S7L050HATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L014ATMA1 dari Infineon dan IAUCN04S7L050HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7L014ATMA1 IAUCN04S7L014ATMA1 - 40V 120A OptiMOS N-MOSFET | Infineon

IAUCN04S7L014ATMA1 - 40V 120A OptiMOS N-MOSFET | Infineon

IAUCN04S7L014ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L014ATMA1 IAUCN04S7L050HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 40V Automotive OptiMOS™ 7
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) 120 A —
On-Resistance RDS(on) Max 1.43 mΩ —
Tegangan Batas Gerbang [DATA_NEEDED: Gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: Total gate charge Qg] [DATA_NEEDED: total gate charge]
Power Dissipation (Pd) [DATA_NEEDED: Power dissipation Pd] —
Rentang Suhu Kerja -55°C to +175°C (typical automotive MOSFET range) —
Paket PG-TDSON-8-34 (TDSON EP, 8-pin) PG-TDSON-8-57 (SuperSO8 half-bridge)
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Configuration Single N-Channel MOSFET Dual N-Channel (Dual Drain, Half-Bridge)
Continuous Drain Current (ID), Tc=25°C — 65 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 5.04 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Power Dissipation (PD) @ Tc=25°C — 40 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 (family-level, automotive grade)
Technology — Trench MOSFET, OptiMOS™ 7 40V

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