IAUCN04S7L014ATMA1 vs IAUCN04S7N037GATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7L014ATMA1 dari Infineon dan IAUCN04S7N037GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IAUCN04S7L014ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Automotive | OptiMOS 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 120 A | — |
| On-Resistance RDS(on) Max | 1.43 mΩ | — |
| Tegangan Batas Gerbang | [DATA_NEEDED: Gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Total gate charge Qg] | — |
| Power Dissipation (Pd) | [DATA_NEEDED: Power dissipation Pd] | — |
| Rentang Suhu Kerja | -55°C to +175°C (typical automotive MOSFET range) | [DATA_NEEDED: junction/ambient temperature limits] |
| Paket | PG-TDSON-8-34 (TDSON EP, 8-pin) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Tipe Mounting | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Qualification | AEC-Q101 (Automotive) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Configuration | Single N-Channel MOSFET | — |
| Technology | — | Trench MOSFET, N-Channel |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Automotive Qualification | — | AEC-Q101 |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |