IAUCN04S7N037GATMA1 vs IAUCN04S7L050HATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N037GATMA1 dari Infineon dan IAUCN04S7L050HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N037GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS™ 7 |
| Technology | Trench MOSFET, N-Channel | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| Paket | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Tipe Mounting | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (family-level, automotive grade) |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Rentang Suhu Kerja | [DATA_NEEDED: junction/ambient temperature limits] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |