IAUCN04S7N037GATMA1 vs IAUCN04S7L050HATMA1 مقایسه
مقایسه دقیق کنار به کنار IAUCN04S7N037GATMA1 توسط Infineon و IAUCN04S7L050HATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ فعالمقایسه مشخصات
| پارامتر | IAUCN04S7N037GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS™ 7 |
| Technology | Trench MOSFET, N-Channel | Trench MOSFET, OptiMOS™ 7 40V |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| بسته‌بندی | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| نوع نصب | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (family-level, automotive grade) |
| وضعیت RoHS | Compliant | Compliant |
| سطح MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| محدوده دمای کاری | [DATA_NEEDED: junction/ambient temperature limits] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | [DATA_NEEDED: gate threshold voltage] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| دمای اتصال کاری | — | -55 °C to +175 °C |