IAUCN08S7L013ATMA1 vs IAUCN04S7L050HATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7L013ATMA1 dari Infineon dan IAUCN04S7L050HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7L013ATMA1 IAUCN04S7L050HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V 40 V
Maximum On-Resistance (RDS(on) max) 1.26 mΩ —
Arus Alir Berlanjut (TC=25°C) [DATA_NEEDED: continuous drain current at TC=25C] —
Continuous Drain Current (TJ) 293 A —
Power Dissipation (TC) 219 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage range] [DATA_NEEDED: gate threshold voltage]
Gate Drive Voltage (typical) 10 V —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-53 (TDSON-8 FL) PG-TDSON-8-57 (SuperSO8 half-bridge)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Qualification AEC-Q101 (automotive) —
Status RoHS Compliant Compliant
Packaging Tape & Reel (suffix ATMA1) —
Series — OptiMOS™ 7
Configuration — Dual N-Channel (Dual Drain, Half-Bridge)
Continuous Drain Current (ID), Tc=25°C — 65 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 5.04 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) @ Tc=25°C — 40 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 (family-level, automotive grade)
Technology — Trench MOSFET, OptiMOS™ 7 40V

Spek dan Sumber

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