IAUCN08S7L013ATMA1 vs IAUCN04S7L050HATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L013ATMA1 disebabkan oleh Infineon dan IAUCN04S7L050HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7L013ATMA1 IAUCN04S7L050HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V 40 V
Maximum On-Resistance (RDS(on) max) 1.26 mΩ —
Arus Kumpal Tetap (TC=25°C) [DATA_NEEDED: continuous drain current at TC=25C] —
Continuous Drain Current (TJ) 293 A —
Power Dissipation (TC) 219 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage range] [DATA_NEEDED: gate threshold voltage]
Gate Drive Voltage (typical) 10 V —
Gambaran Suhu Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-53 (TDSON-8 FL) PG-TDSON-8-57 (SuperSO8 half-bridge)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Qualification AEC-Q101 (automotive) —
Status RoHS Compliant Compliant
Packaging Tape & Reel (suffix ATMA1) —
Series — OptiMOS™ 7
Configuration — Dual N-Channel (Dual Drain, Half-Bridge)
Continuous Drain Current (ID), Tc=25°C — 65 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 5.04 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) @ Tc=25°C — 40 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 (family-level, automotive grade)
Technology — Trench MOSFET, OptiMOS™ 7 40V

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