IAUCN08S7N024ATMA1 vs IAUCN04S7L006ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7N024ATMA1 dari Infineon dan IAUCN04S7L006ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7N024ATMA1 IAUCN04S7L006ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 7 trench OptiMOS-7 trench
Paket PG-TDSON-8-34 (8-pin, exposed pad) PG-TDSON-8-43
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +175C (typical automotive) -55 °C to +175 °C
Dissipasi Listrik (Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] —
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 175 A
R_DS(on) Max — 0.6 mΩ at V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical value]
Gate Charge (Q_g) — [DATA_NEEDED: total gate charge]
Automotive Qualified — Yes (AEC-Q101)
Status RoHS — Compliant
Jumlah Pin — 8
Packaging — Tape and Reel (ATMA1)
Polarity — Single N-Channel

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon