IAUCN10S5L110TATMA1 vs IAUCN08S7L110ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L110TATMA1 dari Infineon dan IAUCN08S7L110ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L110TATMA1 IAUCN08S7L110ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Technology N-Channel MOSFET, Trench, Logic Level OptiMOS™ (Trench)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tj 61 A —
On-Resistance RDS(on) max at VGS=10V 11.3 mΩ —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage rating] —
Power Dissipation (PD) at Tc 88 W —
Suhu Hubung Kerja -55 °C to +175 °C -55 °C to +175 °C
Storage Temperature [DATA_NEEDED: storage temperature] —
Paket PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260°C peak reflow) [DATA_NEEDED: MSL level]
Avalanche Rated 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Extended Qualification —
Status RoHS Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) — 50 A
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 58 W
R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) — 11 mΩ
Gate-Source Voltage (V<sub>GS</sub>) max — [DATA_NEEDED: V_GS_max]
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: V_GS_th]
Total Gate Charge (Q<sub>G</sub>) — [DATA_NEEDED: Q_G_total]
Automotive Qualified — Yes (AEC-Q101 expected per family)
Polarity — Single N-Channel
Configuration — Single

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