IAUCN10S5L110TATMA1 vs IAUCN08S7L110ATMA1 비교
다음의 상세 나란히 비교: IAUCN10S5L110TATMA1 제조: Infineon 및 IAUCN08S7L110ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUCN10S5L110TATMA1 | IAUCN08S7L110ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.08 | $0.46 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET, Trench, Logic Level | OptiMOS™ (Trench) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | — |
| Power Dissipation (PD) at Tc | 88 W | — |
| 동작 접합 온도 | -55 °C to +175 °C | -55 °C to +175 °C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| 패키지 | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-TDSON-8-34 (TDSON-8) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | MSL1 (260°C peak reflow) | [DATA_NEEDED: MSL level] |
| Avalanche Rated | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Extended Qualification | — |
| RoHS 상태 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | — | 50 A |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | — | 58 W |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | — | 11 mΩ |
| Gate-Source Voltage (V<sub>GS</sub>) max | — | [DATA_NEEDED: V_GS_max] |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: V_GS_th] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Q_G_total] |
| Automotive Qualified | — | Yes (AEC-Q101 expected per family) |
| Polarity | — | Single N-Channel |
| Configuration | — | Single |