IAUZ30N06S5L140ATMA1 vs IAUC120N06S5L032ATMA1 Perbandingan
Perbandingan bersamaan detil IAUZ30N06S5L140ATMA1 dari Infineon dan IAUC120N06S5L032ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUZ30N06S5L140ATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 30 A (Tj) | — |
| Power Dissipation (PD, Tc) | 33 W | — |
| RDS(on) Max @ VGS=10 V | 14 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 2.2 V (typ) | — |
| Total Gate Charge (Qg) | 12.2 nC @ VGS=10 V | — |
| Output Capacitance (Coss) | 888 pF @ VDS=30 V | — |
| Paket | PG-TSDSON-8-32 (S3O8, 3x3 mm) | PG-TDSON-8-34 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55°C to +175°C | — |
| Technology Family | OptiMOS 5 | — |
| Automotive Grade | AEC-Q101 qualified | — |
| Gate-Source Voltage Max | ±20 V | — |
| Lead-Free / RoHS | Yes (RoHS compliant) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (60 V) |
| Tipe Transistor | — | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| Rentang Suhu Kerja | — | -55 C to +175 C (T_j) |
| Technology | — | OptiMOS 5 Trench |
| AEC-Q101 Qualified | — | Yes |
| Status RoHS | — | Compliant |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |