IAUZN10S7L289ATMA1 vs IAUC120N06S5L015ATMA1 Perbandingan
Perbandingan bersamaan detil IAUZN10S7L289ATMA1 dari Infineon dan IAUC120N06S5L015ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUZN10S7L289ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-7 | — |
| Technology | Trench MOSFET (N-Channel) | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, Tj) | 27 A | — |
| Power Dissipation (Ptot, Tc=25°C) | 45 W | — |
| On-State Resistance (RDS(on), max, VGS=10V) | 28.9 mΩ | — |
| Paket | PG-TSDSON-8-44 (S3O8, 3x3 mm²) | PG-TDSON-8-43 (Surface Mount) |
| Tipe Mounting | Surface Mount | Surface Mount (exposed pad) |
| Automotive Grade | AEC-Q100 qualified (Automotive MOSFET) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Rentang Suhu Kerja | -55°C to +175°C (Tj) | -55C to +175C (Tj) |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Jumlah Pin | 8 | — |
| RoHS Compliance | Yes | — |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |