IGB50N60TATMA1 vs IGB50N60T Perbandingan
Perbandingan bersamaan detil IGB50N60TATMA1 dari Infineon dan IGB50N60T dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IGB50N60TATMA1 | IGB50N60T |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | IGBTs | IGBTs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | Trenchstop IGBT3 | — |
| Technology | Trench + Field-Stop | — |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous Collector Current (IC) at TC=25°C | 100 A | — |
| Continuous Collector Current (IC) at TC=100°C | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | 150 A |
| Total Power Dissipation (Ptot) at TC=25°C | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.0 V (typ), 6.5 V (max) | — |
| Tegangan Saturasi Pemisah-Penjana (Vce(sat)) | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) | — |
| Short-Circuit Withstand Time (tsc) | 5 µs min at VCE=360V, TJ≤150°C | — |
| Suhu Hubung Kerja | -40 °C to +150 °C | — |
| Paket | PG-TO263-3-2 (D2PAK / TO-263) | PG-TO263-3-2 (TO-263 / D2Pak, surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount (D2Pak tab acts as drain/collector) |
| Co-packaged Diode | Anti-parallel EmCon3 diode | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | — |
| Configuration | Single | — |
| Continuous DC Collector Current (IC, TC=100°C) | — | 50 A |
| Total Power Dissipation (Ptot, TC=25°C) | — | 333 W |
| Gate-Emitter Threshold Voltage (VGE(th), IC=1.2 mA, VCE=VGE) | — | 5.0 V (typical), 4.5 V min / 6.5 V max |
| Gate-Emitter Voltage Maximum (VGES) | — | ±20 V |
| Collector-Emitter Saturation Voltage (VCE(sat), IC=50 A, VGE=15 V) | — | [DATA_NEEDED: VCE(sat) exact value] |
| Zero-Temperature-Coefficient Point (IC at VCE(sat) nominal) | — | [DATA_NEEDED: IC nominal] |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon value] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff value] |
| Total Switching Energy (Ets, VCC=400 V, IC=25 A, VGE=±15 V) | — | 1.7 mJ (typical) |
| Short-Circuit Withstand Time (tsc, VCC=360 V, VGE=±15 V, TC=25°C) | — | 10 µs (typical) |
| Rentang Suhu Hubung Kerja | — | -40 °C to +150 °C |
| Storage Temperature Range | — | -55 °C to +150 °C |
| Technology Family | — | TRENCHSTOP IGBT3 with fieldstop and co-packaged soft-recovery emitter-controlled diode |