IPB024N10N5ATMA1 vs BSC070N10NS5ATMA1 Perbandingan

Perbandingan bersamaan detil IPB024N10N5ATMA1 dari Infineon dan BSC070N10NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB024N10N5ATMA1 BSC070N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 N-Channel MOSFET (trench, shielded gate) OptiMOS 5 (N-channel trench)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, TC=25C) 180 A —
Power Dissipation (PD, TC=25C) 250 W —
On-Resistance RDS(on) max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: Qg total gate charge] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total gate charge] [DATA_NEEDED: typical Qg]
Input Capacitance Ciss [DATA_NEEDED: Ciss value] —
Output Capacitance Coss [DATA_NEEDED: Coss value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
Rentang Suhu Kerja -55C to +175C (junction) —
Paket PG-TO263-7 (D2PAK-7) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 (unlimited floor life at <30C/85% RH) 1 (per JEDEC J-STD-020)
Packaging Tape & Reel (13-inch reel) —
Bebas Halogen Yes (per Infineon product family policy) —
Drain-Source Voltage (VDS) max — 100 V
Continuous Drain Current (ID) at TC=25C — 80 A
RDS(on) max @ VGS=10V — 7 mOhm
Gate-Source Voltage (VGS) max — 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Power Dissition at TC=25C (Ptot) — 83 W
Power Dissipation at TA=25C — 2.5 W
Rentang Suhu Hubung Kerja — -55 C to +150 C
Lead-Free — Yes
Typical Application — Synchronous rectification in SMPS

Spek dan Sumber

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