IPB024N10N5ATMA1 vs IAUC60N10S5L110ATMA1 Perbandingan
Perbandingan bersamaan detil IPB024N10N5ATMA1 dari Infineon dan IAUC60N10S5L110ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB024N10N5ATMA1 - 100V 2.4mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPB024N10N5ATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, TC=25C) | 180 A | — |
| Power Dissipation (PD, TC=25C) | 250 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 2.4 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: Qg total gate charge] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss value] | — |
| Output Capacitance Coss | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | [DATA_NEEDED: min/max operating temperature] |
| Paket | PG-TO263-7 (D2PAK-7) | PG-TDSON-8-33 (TDSON-8 Single) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Level MSL | 1 (unlimited floor life at <30C/85% RH) | 1 (per LCSC datasheet snippet) |
| Packaging | Tape & Reel (13-inch reel) | — |
| Bebas Halogen | Yes (per Infineon product family policy) | Yes (per Infineon product classification) |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™-5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | — | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | — | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | — | 11 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 1.2 V |
| Gate-Source Voltage (V<sub>GS</sub>) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | — | Yes (RoHS compliant per LCSC listing) |
| Packing Code | — | ATMA1 (Tape & Reel) |
| Customer Info / FGR | — | J52 (per Infineon product data) |