IPD031N06L3GATMA1 vs BSC032N04LSATMA1 Perbandingan
Perbandingan bersamaan detil IPD031N06L3GATMA1 dari Infineon dan BSC032N04LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPD031N06L3GATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 trench |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| Maximum Power Dissipation (PD) at TC=25°C | 167 W | — |
| RDS(on) Max at VGS=10V | 3.1 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | — |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | — |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | — |
| Rentang Suhu Kerja | -55°C to +175°C | — |
| Paket | PG-TO252-3 (DPAK) | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | — |
| Level MSL | 1 (Unlimited) | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 5 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 98 A |
| RDS(on) max at VGS=10V | — | 3.2 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Suhu Hubung Kerja | — | -55°C to +175°C |
| Lead-Free | — | Yes |