IPD034N06N3GATMA1 vs ISC080N10NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IPD034N06N3GATMA1 dari Infineon dan ISC080N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD034N06N3GATMA1 ISC080N10NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Technology N-Channel Trench MOSFET (OptiMOS 3) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc 100 A 75 A
Maximum Power Dissipation (Ptot) 167 W —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm —
Gate Threshold Voltage VGS(th) 4 V at 93 uA —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
Paket PG-TO252-3 (DPAK) PG-TDSON-8 FL (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Pin Configuration 3-Pin (2 + Tab) —
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] -55°C to +175°C (TJ max, per datasheet)
Status RoHS Compliant (Pb-free green finish) Compliant
Automotive Qualified Yes (per Infineon product page) —
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020, per datasheet)
Product Family — OptiMOS™ 6 100V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID) at Ta — 13 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 100 W
On-Resistance RDS(on) Typ @ VGS=10V, ID=20A — 8.05 mΩ
Gate Threshold Voltage (VGS(th)) — 3.3 V at 36 µA
Lead-Free — Yes
Bebas Halogen — Yes
Qualification — Industrial grade (per Infineon OptiMOS 6 100V family)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon