IPD50N03S4L06ATMA1 vs IPD50N04S408ATMA1 Perbandingan

Perbandingan bersamaan detil IPD50N03S4L06ATMA1 dari Infineon dan IPD50N04S408ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 - 30V 50A N-Ch OptiMOS | Infineon

IPD50N03S4L06ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD50N03S4L06ATMA1 IPD50N04S408ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (V_DS) 30 V —
Continuous Drain Current (I_D, Tc) 50 A —
On-State Resistance (R_DS(on) max) 5.5 mOhm at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th) typ) 2.2 V —
Total Gate Charge (Q_g) 31 nC at V_GS = 10 V —
Input Capacitance (C_iss) 2.33 nF —
Output Capacitance (C_oss) 600 pF —
Reverse Transfer Capacitance (C_rss) 34 pF —
Power Dissipation (P_D) 56 W at Tc = 25 C —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TO252-3-11 (DPAK), 3-pin (2 + tab), surface mount PG-TO252-3-313 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260 C peak reflow) MSL1 (260 °C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Rating 100% Avalanche Tested —
Status RoHS Compliant (Green Package) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-T2
Polarity — N-Channel
Mode — Enhancement-mode
Drain-Source Voltage (V DS) — 40 V
Continuous Drain Current (I D, Tc) — 50 A
Power Dissipation (P D, Tc) — 46 W
Rentang Suhu Kerja — -55 °C to +175 °C
Avalanche Tested — 100 % Avalanche tested
Green Package (RoHS) — RoHS compliant
Gate Threshold Voltage (V GS(th)) — [DATA_NEEDED: V GS(th) typical]
On-State Resistance (R DS(on)) — [DATA_NEEDED: R DS(on) at V GS = 10 V]
Total Gate Charge (Q G) — [DATA_NEEDED: Q G typical]

Spek dan Sumber

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