IPD50P04P4L11ATMA2 vs IRFR5305TRLPBF Perbandingan

Perbandingan bersamaan detil IPD50P04P4L11ATMA2 dari Infineon dan IRFR5305TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD50P04P4L11ATMA2 IRFR5305TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor P-Channel MOSFET, enhancement mode —
Drain-Source Voltage VDS -40 V —
Continuous Drain Current ID (TC = 25 °C) -50 A —
On-State Resistance RDS(on) (VGS = -10 V) 10.6 mΩ typical —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) -1.0 V to -2.5 V typical —
Typical Gate Charge Qg 45 nC —
Power Dissipation PD (TC = 25 °C) 58 W —
Suhu Hubung Kerja -55 °C to +175 °C -55C to +175C
Paket PG-TO252-3-313 (DPAK), surface mount TO-252AA (DPAK), surface mount
Jumlah Pin 3 (Drain / Tab / Source / Gate) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
RoHS Compliance Compliant —
Level MSL [DATA_NEEDED: MSL rating] —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -31 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Power Dissipation (PD) at Tc=25C — 110 W
Technology — HEXFET fifth-generation planar MOSFET
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS — Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

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