IPD60R280P7SAUMA1 vs BSC027N06LS5ATMA1 Perbandingan

Perbandingan bersamaan detil IPD60R280P7SAUMA1 dari Infineon dan BSC027N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD60R280P7SAUMA1 BSC027N06LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 600 V 60 V
Continuous Drain Current (ID, Tc) 12 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM]
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA Logic-level
Total Power Dissipation (Ptot, Tc) 53 W —
Operating Junction Temperature (TJ) -40 °C to +150 °C —
Technology CoolMOS P7 Superjunction (SJ) N-channel MOSFET (Metal Oxide)
Paket PG-TO252-3 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
Series CoolMOS P7 (7th generation, 600 V) OptiMOS™ 5
Status RoHS Compliant Compliant
Integrated ESD Protection Yes —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Tc=100°C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance (RDS(on)) max @ VGS=10V — 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25°C — 83 W
Rentang Suhu Kerja — -55°C to +150°C
Paket / Case — PG-TDSON-8-7 (SuperSO8 5x6)
Jumlah Pin — 8
Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Avalanche Energy Rated — Yes
MSL (Moisture Sensitivity Level) — MSL1

Spek dan Sumber

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