IPN60R2K0PFD7SATMA1 vs IPN80R4K5P7ATMA1 Perbandingan

Perbandingan bersamaan detil IPN60R2K0PFD7SATMA1 dari Infineon dan IPN80R4K5P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPN60R2K0PFD7SATMA1 IPN80R4K5P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS PFD7 —
Channel Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 600 V —
Continuous Drain Current (Tc) 3 A —
Power Dissipation (Tc) 6 W —
RDS(on) typical @ VGS=10V 2.0 Ohm —
RDS(on) max @ VGS=10V 1.626 Ohm (per Infineon product page) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 3.8 nC @ 10 V (per UTMel listing) —
Input Capacitance (Ciss) 134 pF @ 400 V (per UTMel listing) —
Technology CoolMOS superjunction CoolMOS Superjunction (SJ)
Paket PG-SOT223-3-1 (SOT-223) PG-SOT223 (surface mount, 3-pin + tab)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Level MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant (per Newark listing) Compliant
Product Family — CoolMOS P7
FET Type — N-Channel
Drain-Source Voltage (VDS) — 800 V
Continuous Drain Current (ID, Tc) — 1.5 A
Power Dissipation (Pd, Tc) — 6 W
On-Resistance (RDS(on), VGS=10V) — 4.5 ohm max
Operating Mode — Enhancement-mode
Grade — Industrial
Application — Low-power SMPS, flyback converters, LED drivers
Reel / Tape Packaging — Tape & Reel (T/R)

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