IPN60R2K0PFD7SATMA1 vs IPN80R4K5P7ATMA1 比較

詳細並排比較 IPN60R2K0PFD7SATMA1 由 Infineon 與 IPN80R4K5P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ 啟用中

規格比較

參數 IPN60R2K0PFD7SATMA1 IPN80R4K5P7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS PFD7 —
Channel Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 600 V —
Continuous Drain Current (Tc) 3 A —
Power Dissipation (Tc) 6 W —
RDS(on) typical @ VGS=10V 2.0 Ohm —
RDS(on) max @ VGS=10V 1.626 Ohm (per Infineon product page) —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 3.8 nC @ 10 V (per UTMel listing) —
Input Capacitance (Ciss) 134 pF @ 400 V (per UTMel listing) —
Technology CoolMOS superjunction CoolMOS Superjunction (SJ)
封裝 PG-SOT223-3-1 (SOT-223) PG-SOT223 (surface mount, 3-pin + tab)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
MSL 等級 [DATA_NEEDED: MSL level] —
RoHS 狀態 Compliant (per Newark listing) Compliant
Product Family — CoolMOS P7
FET Type — N-Channel
Drain-Source Voltage (VDS) — 800 V
Continuous Drain Current (ID, Tc) — 1.5 A
Power Dissipation (Pd, Tc) — 6 W
On-Resistance (RDS(on), VGS=10V) — 4.5 ohm max
Operating Mode — Enhancement-mode
Grade — Industrial
Application — Low-power SMPS, flyback converters, LED drivers
Reel / Tape Packaging — Tape & Reel (T/R)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價