IPT008N06NM5LFATMA1 vs ISC015N06NM5LF2ATMA1 Perbandingan
Perbandingan bersamaan detil IPT008N06NM5LFATMA1 dari Infineon dan ISC015N06NM5LF2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
IPT008N06NM5LFATMA1 ✓ AktifInfineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPT008N06NM5LFATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 5 / Linear FET | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc) | 454 A | — |
| Arus Kedip Pengecor | [DATA_NEEDED: pulsed ID] | — |
| On-Resistance RDS(on) at VGS=10 V | 0.8 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) | 3.6 V (typ, 250 µA test) | — |
| Power Dissipation (Tc) | 278 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | — |
| Paket | PG-HSOF-8 (single, flat-lead) | PG-TDSON-8 FL (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Drive (recommended) | 10 V (logic-level compatible above 4.5 V VGS) | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 Linear FET 2 (N-Channel) |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | — |
| REACH Status | Compliant | — |
| AEC-Q100 | not_qualified (industrial-grade by default) | — |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 217 W |
| On-Resistance RDS(on) max at VGS=10V | — | 1.55 mΩ |
| On-Resistance RDS(on) at VGS=10V (typ) | — | 1.3 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3 V |
| Gate-Source Voltage Rating | — | ±20 V |
| Reverse Recovery Charge (Qrr) | — | 1.3 nC |
| Input Capacitance (Ciss) | — | 6.9 nF |
| Output Capacitance (Coss) | — | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | — | 55 pF |
| Total Gate Charge (Qg) | — | 90 nC |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| RoHS | — | Compliant |