IPT008N06NM5LFATMA1 vs ISC015N06NM5LF2ATMA1 比較

詳細並排比較 IPT008N06NM5LFATMA1 由 Infineon 與 ISC015N06NM5LF2ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPT008N06NM5LFATMA1 IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon

IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon

IPT008N06NM5LFATMA1 ✓ 啟用中
Infineon
ISC015N06NM5LF2ATMA1 ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon

ISC015N06NM5LF2ATMA1 ✓ 啟用中

規格比較

參數 IPT008N06NM5LFATMA1 ISC015N06NM5LF2ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Family OptiMOS 5 / Linear FET —
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc) 454 A —
脈衝汲極電流 [DATA_NEEDED: pulsed ID] —
On-Resistance RDS(on) at VGS=10 V 0.8 mΩ —
Gate-Source Threshold Voltage VGS(th) 3.6 V (typ, 250 µA test) —
Power Dissipation (Tc) 278 W —
工作溫度範圍 -55 °C to +175 °C (TJ) —
封裝 PG-HSOF-8 (single, flat-lead) PG-TDSON-8 FL (5x6 mm)
安裝類型 Surface Mount Surface Mount
Gate Drive (recommended) 10 V (logic-level compatible above 4.5 V VGS) —
Technology Trench MOSFET (OptiMOS 5) OptiMOS 5 Linear FET 2 (N-Channel)
MSL 等級 1 (per JEDEC J-STD-020) —
RoHS 狀態 Compliant —
REACH Status Compliant —
AEC-Q100 not_qualified (industrial-grade by default) —
Continuous Drain Current (ID) at Ta — 32 A
Pulsed Drain Current (IDM) at Tc — 275 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 217 W
On-Resistance RDS(on) max at VGS=10V — 1.55 mΩ
On-Resistance RDS(on) at VGS=10V (typ) — 1.3 mΩ
Gate Threshold Voltage (VGS(th)) — 3 V
Gate-Source Voltage Rating — ±20 V
Reverse Recovery Charge (Qrr) — 1.3 nC
Input Capacitance (Ciss) — 6.9 nF
Output Capacitance (Coss) — 1.3 nF
Reverse Transfer Capacitance (Crss) — 55 pF
Total Gate Charge (Qg) — 90 nC
工作接面溫度 — -55 °C to +175 °C
RoHS — Compliant

資料表與資源

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