IPZ40N04S53R1ATMA1 vs BSC034N06NSATMA1 Perbandingan

Perbandingan bersamaan detil IPZ40N04S53R1ATMA1 dari Infineon dan BSC034N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPZ40N04S53R1ATMA1 IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon

IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon

IPZ40N04S53R1ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPZ40N04S53R1ATMA1 BSC034N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5
Drain-to-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D) at Tc=25 C 40 A —
Power Dissipation (P_D) at Tc=25 C 71 W —
R_DS(on) max at V_GS=10 V, I_D=20 A 3.1 mOhm —
Drive Voltage (Max R_DS on, Min R_DS on) 7 V, 10 V —
Maximum V_GS +/-20 V —
Rentang Suhu Kerja -55 C to +175 C -55C to +150C
Paket PG-TSDSON-8 (5x6 mm) with exposed pad PG-TDSON-8-7 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260 C peak reflow) [DATA_NEEDED: MSL level]
Qualification AEC-Q101 automotive —
Avalanche Tested 100 % —
RoHS Compliance Compliant (Green Product) —
Series OptiMOS 5 (IPZ family) —
Polarity — N-Channel
Drain-Source Voltage (VDS) — 60 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 74 W
Status RoHS — Compliant

Spek dan Sumber

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