IQD005N04NM6CGATMA1 vs ISC058N04NM5ATMA1 Perbandingan

Perbandingan bersamaan detil IQD005N04NM6CGATMA1 dari Infineon dan ISC058N04NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQD005N04NM6CGATMA1 ISC058N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 6 (trench FET) OptiMOS 5 trench MOSFET
Drain-to-Source Voltage (VDS) 40 V —
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
RDS(on) Typical 0.5 mΩ —
Continuous Drain Current (ID) at Ta 58 A —
Continuous Drain Current (ID) at Tc 610 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed rating] —
Power Dissipation at Ta 3 W —
Power Dissipation at Tc 333 W —
Rentang Suhu Kerja -55 °C to +150 °C (TJ) -55C to +175C
Paket PG-TTFN-9-U02 (Source-Down 5x6 mm²) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 9 —
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant —
Lead-Free Yes —
Source Configuration Source-Down (bottom-side source for PCB heatsinking) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 40V Normal Level
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 63 A
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon