IQD020N10NM5CGATMA1 vs IQEH50NE2LM7UCGSCATMA1 Perbandingan

Perbandingan bersamaan detil IQD020N10NM5CGATMA1 dari Infineon dan IQEH50NE2LM7UCGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQD020N10NM5CGATMA1 IQEH50NE2LM7UCGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS™ 5 N-channel trench MOSFET Silicon N-Channel Power MOSFET
Drain-Source Voltage (VDS) 100 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 26 A —
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve] —
Pulsed Drain Current (IDM) at TC=25°C 273 A —
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V) —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 333 W —
Rentang Suhu Kerja -55°C to +175°C —
Paket PG-TTFN-9-U02 (PQFN 5x6 mm²) PG-WHTFN-9-1 (surface mount)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating from datasheet] —
Status RoHS Compliant —
Qualification Industrial grade (Infineon OptiMOS™ 5 family) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at TA — 54 A
Continuous Drain Current (ID) at TC — 422 A
RDS(on) Max — 0.5 mΩ
Gate Threshold Voltage (VGS(th)) typ — 2 V
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 150 W
Maximum Junction Temperature — 175 °C
Series — OptiMOS 7

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