IQD063N15NM5SCATMA1 vs IQE220N15NM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQD063N15NM5SCATMA1 dari Infineon dan IQE220N15NM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
IQD063N15NM5SCATMA1 ✓ AktifInfineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQD063N15NM5SCATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 5 | OptiMOS 5 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 151 A | — |
| Continuous Drain Current (ID) at TA=25°C | 14.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) at VGS=10V | 5.1 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | 6.32 mΩ (typ) | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.8 V (max) | — |
| Total Gate Charge (QG) at VGS=10V | 48 nC | — |
| Input Capacitance (Ciss) | 3.6 nF | — |
| Output Capacitance (Coss) | 900 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| Maximum Power Dissition (PD) at TC=25°C | 333 W | — |
| Maximum Power Dissition (PD) at TA=25°C | 3 W | — |
| Rentang Suhu Kerja | -55°C to +175°C | -55C to +150C (junction) |
| Paket | PG-WHSON-8-U02 (WHSON-8 with exposed pad) | PG-WHTFN-9 (Source-Down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V |
| Technology | — | OptiMOS 5, Source-Down |