IQE008N03LM5ATMA1 vs IQE004NE1LM7CGATMA1 Perbandingan

Perbandingan bersamaan detil IQE008N03LM5ATMA1 dari Infineon dan IQE004NE1LM7CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE008N03LM5ATMA1 IQE004NE1LM7CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25°C 27 A —
Continuous Drain Current (ID) at TC=25°C 253 A —
On-Resistance RDS(on) Typical 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) —
Gate Threshold Voltage (VGS(th)) 2 V (at 250 µA per LCSC snippet) —
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 89 W —
Paket PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down PG-TTFN-9-3 (surface mount)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +150°C (typical MOSFET junction rating) —
Gate-Source Voltage (VGS) Max ±20 V (typical MOSFET rating) —
Technology OptiMOS 5, Source-Down N-Channel Trench Power MOSFET
Status RoHS Compliant (per LCSC listing) Compliant
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Series — OptiMOS 7
Drain-Source Voltage (VDS) — 15 V
Continuous Drain Current (ID, TA=25C) — 58 A
Continuous Drain Current (ID, TC=25C) — 379 A
Power Dissipation (TA=25C) — 2.1 W
Power Dissipation (TC=25C) — 89 W
On-Resistance RDS(on) max — 0.45 mOhm at VGS=10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Suhu Kerja — -55C to +150C (junction)
Packaging — Tape & Reel (CGATMA1 suffix)
Polarization — N-Channel

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