IQE008N03LM5ATMA1 vs IQE004NE1LM7CGATMA1 비교
다음의 상세 나란히 비교: IQE008N03LM5ATMA1 제조: Infineon 및 IQE004NE1LM7CGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IQE008N03LM5ATMA1 | IQE004NE1LM7CGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.94 | $1.06 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 27 A | — |
| Continuous Drain Current (ID) at TC=25°C | 253 A | — |
| On-Resistance RDS(on) Typical | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 µA per LCSC snippet) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 89 W | — |
| 패키지 | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | PG-TTFN-9-3 (surface mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55°C to +150°C (typical MOSFET junction rating) | — |
| Gate-Source Voltage (VGS) Max | ±20 V (typical MOSFET rating) | — |
| Technology | OptiMOS 5, Source-Down | N-Channel Trench Power MOSFET |
| RoHS 상태 | Compliant (per LCSC listing) | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 15 V |
| Continuous Drain Current (ID, TA=25C) | — | 58 A |
| Continuous Drain Current (ID, TC=25C) | — | 379 A |
| Power Dissipation (TA=25C) | — | 2.1 W |
| Power Dissipation (TC=25C) | — | 89 W |
| On-Resistance RDS(on) max | — | 0.45 mOhm at VGS=10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| 동작 온도 | — | -55C to +150C (junction) |
| Packaging | — | Tape & Reel (CGATMA1 suffix) |
| Polarization | — | N-Channel |