IQE050N08NM5CGATMA1 vs IQE022N06LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQE050N08NM5CGATMA1 dari Infineon dan IQE022N06LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE050N08NM5CGATMA1 | IQE022N06LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (Ta) | 16 A | — |
| Continuous Drain Current (Tc) | 101 A | — |
| On-Resistance RDS(on) Max | 5.0 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Paket | PG-TTFN-9-1 (Surface Mount) | PG-WHTFN-9 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | — |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Suhu Kerja | -55°C to +175°C (TJ max) | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Continuous Drain Current (TC) | — | 151 A |
| Continuous Drain Current (TA) | — | 24 A |
| Maximum Power Dissipation (TC) | — | 100 W |
| Maximum Power Dissipation (TA) | — | 2.5 W |
| RDS(on) Maximum at VGS=10V | — | 2.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Rentang Suhu Kerja | — | -55C to +150C |
| Technology Family | — | OptiMOS 5 |
| Jumlah Pin | — | 9 (PG-WHTFN-9) |