IQEH54NE2LM7UCGATMA1 vs IQEH84NE2LM7UCGATMA1 Perbandingan
Perbandingan bersamaan detil IQEH54NE2LM7UCGATMA1 dari Infineon dan IQEH84NE2LM7UCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQEH54NE2LM7UCGATMA1 | IQEH84NE2LM7UCGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta | 52 A | 42 A |
| Continuous Drain Current (ID) at Tc | 406 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 150 W | — |
| Paket | PG-TTFN-9-3 | PG-TTFN-9-3 (surface mount, source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) at 10V VGS | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical in nC] | — |
| Rentang Suhu Kerja | -55C to +150C (typical MOSFET range) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 7 (Trench MOSFET) |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 107 W |
| RDS(on) @ VGS=10 V | — | [DATA_NEEDED: RDS(on) at 10 V] |
| RDS(on) @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Jumlah Pin | — | [DATA_NEEDED: pin count from datasheet pinout] |
| Lead-Free | — | Yes |
| Switching Application | — | Hard- and soft-switching |