IRF150DM115XTMA1 vs IPP075N15N3GXKSA1 Perbandingan

Perbandingan bersamaan detil IRF150DM115XTMA1 dari Infineon dan IPP075N15N3GXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRF150DM115XTMA1 IRF150DM115XTMA1 - 150V OptiMOS 5 N-FET | Infineon

IRF150DM115XTMA1 - 150V OptiMOS 5 N-FET | Infineon

IRF150DM115XTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRF150DM115XTMA1 IPP075N15N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRF150DM115XTMA1 —
Technology OptiMOS 5 (N-channel, normal level) N-Channel MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) [DATA_NEEDED: ID @ 25C and TC] A —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max @ VGS=10V] mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] V —
Gate Charge (QG) [DATA_NEEDED: total QG @ VGS=10V] nC —
Avalanche Rated 100% avalanche tested —
Paket DirectFET (double-side cooled, ultra-thin) PG-TO220-3 (TO-220 through-hole)
Tipe Mounting Surface Mount Through Hole
Polarity / Channel Type N-Channel —
Rentang Suhu Kerja [DATA_NEEDED: Tj max] C [DATA_NEEDED: junction operating temperature range]
Level MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant (lead-free per datasheet) —
Gate Drive Level Normal-level (10 V drive) —
Product Family — OptiMOS 3
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

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