IRF150DM115XTMA1 vs IPP075N15N3GXKSA1 比較
詳細並排比較 IRF150DM115XTMA1 由 Infineon 與 IPP075N15N3GXKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF150DM115XTMA1 | IPP075N15N3GXKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRF150DM115XTMA1 | — |
| Technology | OptiMOS 5 (N-channel, normal level) | N-Channel MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) | [DATA_NEEDED: ID @ 25C and TC] A | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max @ VGS=10V] mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] V | — |
| Gate Charge (QG) | [DATA_NEEDED: total QG @ VGS=10V] nC | — |
| Avalanche Rated | 100% avalanche tested | — |
| 封裝 | DirectFET (double-side cooled, ultra-thin) | PG-TO220-3 (TO-220 through-hole) |
| 安裝類型 | Surface Mount | Through Hole |
| Polarity / Channel Type | N-Channel | — |
| 工作溫度範圍 | [DATA_NEEDED: Tj max] C | [DATA_NEEDED: junction operating temperature range] |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| RoHS 狀態 | Compliant (lead-free per datasheet) | — |
| Gate Drive Level | Normal-level (10 V drive) | — |
| Product Family | — | OptiMOS 3 |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Power Dissipation (PD, Tc=25C) | — | 300 W |
| On-State Resistance (RDS(on) max, VGS=10V) | — | 7.5 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage absolute max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | RoHS Compliant |
| Ordering Code Suffix | — | GXKSA1 (Tube pack, RoHS compliant) |