IRF540ZPBF vs IRFR3710ZTRPBF Perbandingan

Perbandingan bersamaan detil IRF540ZPBF dari Infineon dan IRFR3710ZTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF540ZPBF IRFR3710ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRF540ZPBF —
Technology HEXFET Power MOSFET (N-Channel DMOS) HEXFET (IR MOSFET)
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D) at T_C=25C 36 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS maximum rating] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
On-Resistance R_DS(on) max at V_GS=10V 26.5 mOhm —
Total Gate Charge (Q_g) 42 nC —
Power Dissipation (P_D) at T_C=25C 92 W —
Maximum Junction Temperature 175 C —
Rentang Suhu Hubung Kerja -55 C to +175 C —
Paket TO-220AB (through-hole, 3-lead) TO-252AA (DPAK)
Tipe Mounting Through Hole Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Automotive Qualified Yes (per datasheet description) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 56 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
Power Dissipation (PD) at TC=25C — 140 W
Suhu Hubung Kerja — -55C to +175C

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