IRF7205TRPBF vs IRF9Z34NPBF Perbandingan

Perbandingan bersamaan detil IRF7205TRPBF dari Infineon dan IRF9Z34NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7205TRPBF IRF9Z34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel MOSFET —
Technology IR HEXFET (4th generation) HEXFET (5th generation)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V —
Total Gate Charge Qg 27 nC —
Dissipasi Listrik (TC=25°C) 2.5 W —
Suhu Hubung Kerja -55 °C to +150 °C —
Paket SO-8 (8-SO) TO-220AB (through-hole, 3-pin)
Tipe Mounting Surface Mount Through Hole
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) at Tc=25C — -19 A
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Rentang Suhu Kerja — -55C to +175C (junction)
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free — Yes (PBF suffix)
Status RoHS — Compliant

Spek dan Sumber

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